收藏本站
NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
7. Application information
The PESDxS4UF is designed for the protection of up to four unidirectional data or signal
lines from the damage caused by ESD and surge pulses. The PESDxS4UF may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESDxS4UF provides a surge capability of 110 W per line for an 8/20 μ s waveform
each.
data- or transmission lines
DUT
DUT
1
6
1
6
2
3
5
4
n.c.
2
3
5
4
n.c.
unidirectional protection
of 4 lines
bidirectional protection
of 3 lines
006aab128
Fig 9. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxS4UF as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD3V3S4UF_PESD5V0S4UF_1
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 17 January 2008
8 of 13
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
PESD5V0S5UD,115 DIODE ARRAY ESD 5V 6-TSOP
PESD5V0U1BB,115 DIODE ULOW ESD PROTECTION SOD523
PESD5V0U1BLD,315 DIODE ESD PROECT ULOW SOD-882
PESD5V0U1UA,115 DIODE ESD PROT UNI 5V SOD323-2
PESD5V0U2BM,315 DIODE ESD PROTECT BIDIR SOT-883
PESD5V0U2BT,215 DIODE ULOW ESD PROTECTION SOT-23
PESD5V0U4BF,115 DIODE ESD PROTECT VLOW 6-XSON
PESD5V0U5BV,115 DIODE ARRAY ESD BI-DIR SS MINI6
相关代理商/技术参数
PESD5V0S5UD 制造商:NXP Semiconductors 功能描述:DIODE TVS 0.2UA 3.3V SSOT-6
PESD5V0S5UD T/R 功能描述:TVS二极管阵列 5V 5X ESD ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD5V0S5UD,115 功能描述:TVS二极管阵列 5V 5X ESD ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD5V0S5UD115 制造商:NXP Semiconductors 功能描述:DIODE TVS TSOP-6
PESD5V0U1BA 制造商:NXP Semiconductors 功能描述:DIODE TVS 0.2UA 5V SOD-323 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.2UA, 5V, SOD-323
PESD5V0U1BA T/R 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0U1BA,115 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0U1BA115 制造商:NXP Semiconductors 功能描述:DIODE TVS 5V SOD-323